Atomic structure of the stoichiometric GaAs(114) surface

被引：27

作者：

Márquez, J ^{[1
]}

Kratzer, P ^{[1
]}

Geelhaar, L ^{[1
]}

Jacobi, K ^{[1
]}

Scheffler, M ^{[1
]}

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.86.115

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The stoichiometric GaAs(114) surface has been prepared using molecular beam epitaxy followed by annealing in ultrahigh vacuum. Based on iii situ scanning tunneling microscopy measurements and first-principles electronic-structure calculations. we determine the surface: reconstruction which we call alpha2(2 X 1). Contrary to what is expected for a, high-index surface. it is surprisingly elementary. The (2 x 1) unit cell contains two As dimers and two rebonded Ga atoms. The surface energy is calculated as 53 meV/Angstrom (2), which falls well within the range of low-index GaAs surface energies.

引用

页码：115 / 118

页数：4

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