HRTEM study of AlxGa1-xN/AlN DBR mirrors

被引：5
作者：
Ponce, A
Molina, SI
Fedler, F
Klausing, H
Semchinova, O
Aderhold, J
Graul, J
机构：
[1] Univ Cadiz, Dept Ciencia Mat, E-11510 Puerto Real, Cadiz, Spain
[2] Univ Cadiz, IM & QI, E-11510 Puerto Real, Cadiz, Spain
[3] Univ Hannover, Informat Technol Lab, D-30167 Hannover, Germany
来源：
DIAMOND AND RELATED MATERIALS | 2003年 / 12卷 / 3-7期
关键词：
AlN; GaN; high resolution transmission electron microscopy; distributed Bragg reflector;
D O I：
10.1016/S0925-9635(02)00215-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In the present work semiconductor quarter wavelength distributed Bragg reflector (DBR) mirrors have been studied by high resolution transmission electron microscopy (HRTEM). The mirrors have been fabricated monolithically by plasma assisted molecular beam epitaxy (MBE) on sapphire (0001) substrates. The samples are conformed of a large number of AlxGa1-xN/ AlN layers with 5.5 and 20.5 periods, both with different aluminium concentration. The samples have been designed utilising spectroscopic ellipsometry (SE) dispersion spectra of previously fabricated single layers. The aim of this work was to determine the distortion of lattice parameters of AlGa1-xN/AlN epilayers, since this is important for the later production of vertical cavity surface emitting lasers (VCSELs). Distortions of half periods layers were determined from HRTEM techniques and are compared with the distortion determination using an equilibrium theory and high resolution X-ray diffraction (XRD) measurements. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：1178 / 1181
页数：4
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