Growth mechanism of Si-faceted dendrites

被引：63
作者：
Fujiwara, K. [1 ]
Maeda, K. [1 ]
Usami, N. [1 ]
Nakajima, K. [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 05期
关键词：
D O I：
10.1103/PhysRevLett.101.055503
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The growth mechanism of Si-faceted dendrite was studied using an in situ observational technique. We directly observed the growth processes of Si-faceted dendrites from Si melts. It is found that triangular corners with an angle of 60 degrees are formed at the dendrite tip. We present an original growth model for faceted dendrites based on the experimental evidence. The model fully explains the growth process of faceted dendrites.
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页数：4
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