Growth mechanism of Si-faceted dendrites

被引：65
作者：
Fujiwara, K. [1 ]
Maeda, K. [1 ]
Usami, N. [1 ]
Nakajima, K. [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 05期
关键词：
D O I：
10.1103/PhysRevLett.101.055503
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The growth mechanism of Si-faceted dendrite was studied using an in situ observational technique. We directly observed the growth processes of Si-faceted dendrites from Si melts. It is found that triangular corners with an angle of 60 degrees are formed at the dendrite tip. We present an original growth model for faceted dendrites based on the experimental evidence. The model fully explains the growth process of faceted dendrites.
引用
收藏
页数：4
相关论文
共 25 条
[1]   INFLUENCE OF TWIN STRUCTURE ON GROWTH DIRECTIONS IN DENDRITIC RIBBONS OF MATERIALS HAVING DIAMOND OR ZINC-BLENDE STUCTURES [J].
ALBON, N ;
OWEN, AE .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (07) :899-&
[2]   Dendrite growth processes of silicon and germanium from highly undercooled melts [J].
Aoyama, T ;
Takamura, Y ;
Kuribayashi, K .
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1999, 30 (05) :1333-1339
[3]   GROWTH OF WIDE, FLAT CRYSTALS OF SILICON WEB [J].
BARRETT, DL ;
MYERS, EH ;
HAMILTON, DR ;
BENNETT, AI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :952-&
[4]   DENDRITIC GROWTH OF GERMANIUM CRYSTALS [J].
BENNETT, AI ;
LONGINI, RL .
PHYSICAL REVIEW, 1959, 116 (01) :53-61
[5]   GROWTH OF MONOCRYSTALS OF GERMANIUM FROM AN UNDERCOOLED MELT [J].
BILLIG, E .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1955, 229 (1178) :346-&
[6]   Silicon doping induced bending in aluminum nanowires [J].
Chen, Hung-Jen ;
Chen, Yen-Yu ;
Hsieh, Chin-Hua ;
Lin, Su-Jien ;
Chou, Li-Jen ;
Hsu, Wen-Kuang .
APPLIED PHYSICS LETTERS, 2007, 90 (02)
[7]  
FLEMINGS MC, 1974, SOLIDIFICATION PROCE, P318
[8]   Formation mechanism of parallel twins related to Si-facetted dendrite growth [J].
Fujiwara, K. ;
Maeda, K. ;
Usami, N. ;
Sazaki, G. ;
Nose, Y. ;
Nakajima, K. .
SCRIPTA MATERIALIA, 2007, 57 (02) :81-84
[9]   In-situ observations of melt growth behavior of polycrystalline silicon [J].
Fujiwara, K ;
Obinata, Y ;
Ujhara, T ;
Usami, N ;
Sazaki, G ;
Nakajima, K .
JOURNAL OF CRYSTAL GROWTH, 2004, 262 (1-4) :124-129
[10]   Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting [J].
Fujiwara, Kozo ;
Pan, Wugen ;
Usami, Noritaka ;
Sawada, Kohei ;
Tokairin, Masatoshi ;
Nose, Yoshitaro ;
Nomura, Akiko ;
Shishido, Toetsu ;
Nakajima, Kazuo .
ACTA MATERIALIA, 2006, 54 (12) :3191-3197
123