A 209-233 GHz Frequency Source in 90 nm CMOS Technology

被引：28

作者：

Khamaisi, Bassam ^{[1
]}

Socher, Eran ^{[1
]}

机构：

[1] Tel Aviv Univ, Sch Elect Engn, IL-69978 Tel Aviv, Israel

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 05期

关键词：

CMOS; Colpitts topology; J-band; millimeter-wave; voltage controlled oscillator (VCO);

D O I：

10.1109/LMWC.2012.2190272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a J-band signal source based on a third harmonic generation of a differential Colpitts voltage controlled oscillator (VCO). The source covers a frequency range from 209.3 to 233.3 GHz, which corresponds to a 10.8% total tuning range. This is the widest tuning range in a J-band source signal reported to date. The VCO was fabricated using a 90 nm Mixed-Mode/RF CMOS process; it provides -6.2 dBm output power at 228 GHz, while consuming 48 mA from a 1.8 V supply, and an estimated phase noise of -90.5 dBc/Hz at 1 MHz offset from the carrier.

引用

页码：260 / 262

页数：3

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