Room temperature ferromagnetism in sol-gel prepared Co-doped ZnO

被引:20
作者
Varshney, Prateek [1 ]
Srinet, Gunjan [1 ]
Kumar, Ravindra [1 ]
Sajal, Vivek [1 ]
Sharma, S. K. [2 ]
Knobel, M. [2 ]
Chandra, Jeewan [3 ]
Gupta, Govind [4 ]
Kulriya, P. K. [5 ]
机构
[1] Jaypee Inst Informat Technol, Dept Phys & Mat Sci & Engn, Noida 201307, Uttar Pradesh, India
[2] Univ Estadual Campinas UNICAMP, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP, Brazil
[3] Natl Inst Technol, Srinagar, Uttarakhand, India
[4] Natl Phys Lab, New Delhi 110012, India
[5] Interuniv Accelerator Ctr, New Delhi, India
关键词
Diluted magnetic semiconductors; ZnO; MAGNETIC-PROPERTIES; MN; SPINTRONICS; NI;
D O I
10.1016/j.mssp.2012.02.002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the high temperature ferromagnetism in Co-doped ZnO samples with 2%, 4% and 6% nominal Co concentrations prepared by the sol-gel method. X-ray diffraction and X-ray photoelectron spectroscopy analyses confirm the absence of metallic Co clusters or any other impurity phases different from wurtzite-type ZnO. It is also observed that Co has occupied Zn sites. UV-visible absorption studies show an increase in band gap with Co concentration. The field dependence of magnetization exhibited clear ferromagnetism at room temperature with saturation magnetization and coercive field of the order of 0.0066-0.0239 emu/g and 149.09-40.31 Oe, respectively. Increase of saturation magnetization value with Co doping indicated that the ferromagnetism in the samples may be due to percolation of bound magnetic polarons. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:314 / 318
页数:5
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