Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium

被引：27

作者：

Iba, Satoshi ^{[1
]}

Saito, Hidekazu ^{[1
]}

Spiesser, Aurelie ^{[1
]}

Watanabe, Suguru ^{[2
]}

Jansen, Ron ^{[1
]}

Yuasa, Shinji ^{[1
]}

Ando, Koji ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[2] Univ Tsukuba, Tsukuba, Ibaraki 3058571, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 02期

关键词：

CONDUCTION; SILICON;

D O I：

10.1143/APEX.5.023003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin accumulation induced in p-type germanium from Fe/MgO tunnel contacts is studied as a function of hole concentration p (10(16)-10(19) cm(-3)). For all p, the contacts are free of rectification and Schottky barrier, guaranteeing spin injection into the Ge and preventing spin accumulation enhancement by two-step tunneling via interface states. The observed spin accumulation is smallest for nondegenerate doping (p similar to 10(16) cm(-3)) and increases for heavily doped Ge. This trend is opposite to what is expected from spin injection and diffusion theory. For heavily doped Ge, the observed spin accumulation is orders of magnitude larger than predicted. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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