Real-time observation of alternating growth on GaSb(001) using core-level photoelectron spectroscopy

被引：4

作者：

Maeda, F ^{[1
]}

Watanabe, Y ^{[1
]}

Oshima, M ^{[1
]}

机构：

[1] NTT, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 112卷

关键词：

D O I：

10.1016/S0169-4332(96)00991-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The alternating growth process of GaSb on a (001) surface was analyzed by real-time core-level photoelectron spectroscopy. Using intensity analysis at the Ga supply stage, Ga growth mode was found to change from 2D growth to 3D growth at substrate temperatures between 495 and 520 degrees C. Using intensity analysis at the Sb desorption stage, we found that the behavior of Sb atoms also changed at this temperature. These results show that a substrate temperature of about 500 degrees C is critical for the alternating growth of GaSb(001).

引用

页码：69 / 74

页数：6