Real-time observation of alternating growth on GaSb(001) using core-level photoelectron spectroscopy

被引：4

作者：

Maeda, F ^{[1
]}

Watanabe, Y ^{[1
]}

Oshima, M ^{[1
]}

机构：

[1] NTT, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 112卷

关键词：

D O I：

10.1016/S0169-4332(96)00991-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The alternating growth process of GaSb on a (001) surface was analyzed by real-time core-level photoelectron spectroscopy. Using intensity analysis at the Ga supply stage, Ga growth mode was found to change from 2D growth to 3D growth at substrate temperatures between 495 and 520 degrees C. Using intensity analysis at the Sb desorption stage, we found that the behavior of Sb atoms also changed at this temperature. These results show that a substrate temperature of about 500 degrees C is critical for the alternating growth of GaSb(001).

引用

页码：69 / 74

页数：6

共 12 条

[1] ASPNES DE, 1987, PHYS REV LETT, V59, P1678
[2] DAY RH, 1981, J APPL PHYS, V52, P965
[3] TIME-RESOLVED X-RAY-SCATTERING STUDIES OF LAYER-BY-LAYER EPITAXIAL-GROWTH
FUOSS, PH
KISKER, DW
LAMELAS, FJ
STEPHENSON, GB
IMPERATORI, P
BRENNAN, S
[J]. PHYSICAL REVIEW LETTERS, 1992, 69 (19) : 2791 - 2794
[4] IN-SITU OBSERVATION OF MONOLAYER STEPS DURING MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE BY SCANNING ELECTRON-MICROSCOPY
HOMMA, Y
OSAKA, J
INOUE, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (4B): : L563 - L566
[5] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY
HORIKOSHI, Y
KAWASHIMA, M
YAMAGUCHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870
[6] OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
ICHIKAWA, M
DOI, T
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1141 - 1143
[7] OPTICAL INVESTIGATION ON THE GROWTH-PROCESS OF GAAS DURING MIGRATION-ENHANCED EPITAXY
KOBAYASHI, N
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1880 - L1882
[8] Photoelectron spectroscopy on reconstructed GaSb(001)
Maeda, F
Watanabe, Y
Oshima, M
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1996, 80 : 225 - 228
[9] GaSb-growth study by realtime crystal-growth analysis system using synchrotron radiation photoelectron spectroscopy
Maeda, F
Watanabe, Y
Muramatsu, Y
Oshima, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (08): : 4457 - 4462
[10] MAEDA F, 1996, UNPUB PHYS REV LETT

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