Biased enhanced nucleation of diamond on metals: An OES and electrical investigation

被引:10
作者
Whitfield, MD
Rodway, D
Savage, JA
Foord, JS
Jackman, RB
机构
[1] UNIV LONDON UNIV COLL,LONDON WC1E 7JE,ENGLAND
[2] DRA MALVERN,GREAT MALVERN WP14 3PS,WORCS,ENGLAND
[3] UNIV OXFORD,PHYS & THEORET CHEM LAB,OXFORD OX1 3QZ,ENGLAND
关键词
bias; diamond; nucleation; spectroscopy;
D O I
10.1016/S0925-9635(96)00663-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Biased enhanced nucleation (BEN) on non-diamond substrates is poorly understood and displays problems of reproducibility. In this work, optical emission spectroscopy (OES) and electrical measurements have been used to study the BEN process. OES reveal changes in the chemical species within the plasma that occur as a result of the applied bias to a tungsten substrate, As the bias is applied the atomic hydrogen intensity and the ratio of C-2 to CH species detected changes considerably. Both effects appear to be greatest near the substrate surface. The results are discussed in terms of possible origins for the bias enhanced nucleation process. Electrical measurements indicate that reactor pressure may be responsible in part for the reproducibility problems often associated with the BEN technique. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:658 / 663
页数:6
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