Morphology Evolution of Monolayer MoS2 Flakes with Seed Promotor Grown by CVD

We report a developed preparation process on the monolayer MoS2 which was grown on SiO2/Si substrates with seed promotor by atmospheric-pressure chemical vapor deposition (CVD) method. It is indicated that growth temperature and proportion of precursors play significant roles on the morphology of the monolayer MoS2 which can change from three-point star to triangle and hexagon. The dimension of the MoS2 flake is mainly dependent on the growth temperature, while its morphology is mainly influenced by the amount of the loaded MoO3. Raman spectra and AFM images show that the MoS2 flakes of the three morphologies are all monolayer.