Investigation of defect-related optical properties in AlxInyGa1-x-yN quaternary alloys with different Al/In ratios

被引：7

作者：

Hu, S. Y. ^{[1
]}

Lee, Y. C. ^{[2
]}

Feng, Z. C. ^{[3
]}

Yang, S. H. ^{[4
]}

机构：

[1] Tung Fang Design Univ, Dept Elect Engn, Kaohsiung 82941, Taiwan

[2] Tungnan Univ, Dept Elect Engn, Taipei 22202, Taiwan

[3] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10617, Taiwan

[4] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung 20224, Taiwan

来源：

JOURNAL OF LUMINESCENCE | 2012年 / 132卷 / 04期

关键词：

AlInGaN; Defects; Photoluminescence; Photoconductivity; INALGAN ALLOYS; PHOTOCONDUCTIVITY; ALGAN;

D O I：

10.1016/j.jlumin.2011.11.028

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

AlxInyGa1-x-yN quaternary alloys with different ratios of Al/In were grown by metal-organic chemical vapor deposition on GaN/Al2O3 substrates. The structural and emission properties of the as-grown samples were investigated, respectively, by high-resolution X-ray diffraction and photoluminescence (PL) measurements. The PL emission character is related to the two prominent quenching bands, which have been determined to be located at around 1.1 eV and 1.7 eV above the valence band, respectively, by the method of optical quenching of photoconductivity. PL emission is most intense when the Al/In ratio is 7.5 for the AlxInyGa1-x-yN layer. In addition, a stronger quenching phenomenon with Al/In ratio of 5.0 in AlxInyGa1-x-yN is observed in accordance with a reduction of the intensity of AlxInyGa1-x-yN-related emission peak. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1037 / 1040

页数：4

共 22 条

[1] Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy [J].

Arehart, A. R. ;

Corrion, A. ;

Poblenz, C. ;

Speck, J. S. ;

Mishra, U. K. ;

Ringel, S. A. .

APPLIED PHYSICS LETTERS, 2008, 93 (11)

[2] PHOTOCONDUCTIVITY OF ZINC SELENIDE CRYSTALS AND A CORRELATION OF DONOR AND ACCEPTOR LEVELS IN II-VI-PHOTOCONDUCTORS [J].

BUBE, RH ;

LIND, EL .

PHYSICAL REVIEW, 1958, 110 (05) :1040-1049

[3] Optical quenching of photoconductivity in undoped n-GaN [J].

Cai, S ;

Parish, G ;

Umana-Membreno, GA ;

Dell, JM ;

Nener, BD .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) :1081-1088

[4] Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys [J].

Chen, CH ;

Huang, LY ;

Chen, YF ;

Jiang, HX ;

Lin, JY .

APPLIED PHYSICS LETTERS, 2002, 80 (08) :1397-1399

[5] Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer [J].

Fang, Cebao ;

Wang, Xiaoliang ;

Xiao, Hongling ;

Hu, Guoxin ;

Wang, Cuimei ;

Wang, Xiaoyan ;

Li, Jianping ;

Wang, Junxi ;

Li, Chengji ;

Zeng, Yiping ;

Li, Jinmin ;

Wang, Zanguo .

JOURNAL OF CRYSTAL GROWTH, 2007, 298 :800-803

[6] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes [J].

Hirayama, H .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[7] Solid phase immiscibility in GaInN [J].

Ho, IH ;

Stringfellow, GB .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703

[8] Anomalous luminescence behavior in the InAlGaN thin film [J].

Hu, Sheng-Yao ;

Lee, Yueh-Chien ;

Feng, Zhe-Chuan ;

Yang, Shi-Hong .

JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (05) :2300-2303

[9] Optical quenching of photoconductivity in GaN photoconductors [J].

Huang, ZC ;

Mott, DB ;

Shu, PK ;

Zhang, R ;

Chen, JC ;

Wickenden, DK .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2707-2709

[10]

Jiang HX, 2002, OPTO-ELECTRON REV, V10, P271

← 1 2 3 →