Very-high-frequency thermal microplasma jet for the rapid crystallization of amorphous silicon

被引：7

作者：

Shirai, Hajime ^{[1
]}

Sakurai, Yusuke ^{[1
]}

Yeo, Mina ^{[1
]}

Haruta, Koji ^{[1
]}

Kobayashi, Tomohiro ^{[2
]}

Ishikawa, Tatsuo ^{[3
]}

机构：

[1] Saitama Univ, Grad Sch Sci & Technol, Dept Phys & Funct Mat Sci, Saitama 3388570, Japan

[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

[3] Horiba Co Ltd, Tokyo 1010031, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 13期

关键词：

plasma annealing; atmospheric pressure plasma; amorphous silicon; polycrystalline silicon; crystallization; TFT; solar cell;

D O I：

10.1016/j.tsf.2007.10.066

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The rapid crystallization of amorphous silicon utilizing a very-high-frequency (VHF) inductive coupling thermal microplasma jet of argon is demonstrated. Highly crystallized Si films were synthesized by adjusting the translational velocity of the substrate stage and flow rate of argon. The crystallization proceeded uniformly to the film depth. The H concentration in the films decreased from 10(21) cm(-3) to 10(19) cm(-3) with no marked increases in oxygen and nitrogen impurity concentrations and defect density. The crystallization of a-Si proceeded with time constants of similar to 10 ms, which was 4-6 orders of magnitude slower than the laser-crystallization. The crystallization process is discussed in terms of the solidification from molten Si by the rapid local heating of a-Si. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：4456 / 4461

页数：6

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