Application of a new body contact to SOI LDMOSFET devices, three-dimensional simulation

被引：0
|
作者：
Daghighi, Arash [1 ]
Osman, Mohamed A. [2 ]
机构：
[1] Islamic Azad Univ Majlesi Branch, Dept Elect Engn, Esfahan, Iran
[2] Washington State Univ, Sch Elect Engn & Comp Sci, Pullman, WA 99163 USA
来源：
CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
SOI LDMOSFET; floating body effects; body contact; on-resistance; breakdown voltage; three-dimensional simulation; isothermal drift-diffusion model;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Application of a new area efficient body contact to LDMOSFET devices in silicon-on-insulator (SOI) material has been investigated using three-dimensional simulation. A comparative study of the new body contact and a conventional body-contacted structure for high voltage SOI devices is presented. Using the new body contact, current drive (I-DS) was increased by 14% and current gain cut-off frequency (f(T)) by 10%. In addition, improved performance is achieved when comparing on-resistance (R-ON) and breakdown voltage (V-BR,). The new body contact structure is applicable to both high-voltage planar or trench SOI and bulk devices.
引用
收藏
页码：529 / +
页数：2
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