Voltage-controlled active mid-infrared plasmonic devices

被引：29

作者：

Anglin, K. ^{[1
]}

Ribaudo, T. ^{[1
]}

Adams, D. C. ^{[1
]}

Qian, X. ^{[1
]}

Goodhue, W. D. ^{[1
]}

Dooley, S. ^{[2
]}

Shaner, E. A. ^{[3
]}

Wasserman, D. ^{[1
]}

机构：

[1] Univ Massachusetts Lowell, Dept Phys & Appl Phys, Lowell, MA 01854 USA

[2] Sensors Directorate, Dayton, OH 45433 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 12期

基金：

美国国家科学基金会;

关键词：

SURFACE-PLASMONS; HAFNIUM OXIDE; TRANSMISSION; EXCITATION; LIGHT; SILVER;

D O I：

10.1063/1.3600230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate active voltage-controlled spectral tuning of mid-infrared plasmonic structures. Extraordinary optical transmission gratings were fabricated on n-doped GaAs epilayers with a HfO2 gate dielectric between the grating and the doped semiconductor. The permittivity of the GaAs was tuned by depleting charge carriers below the top grating gate upon the application of a reverse bias to the gate. Devices were characterized both electrically and optically, and resonant transmission peak spectral and transmitted intensity shifts were achieved. Possible applications for, as well as the limitations of, the demonstrated technology are discussed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600230]

引用

页数：5

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