Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With fT of 260 GHz

被引：72

作者：

Shinohara, K. ^{[1
]}

Regan, D. ^{[1
]}

Milosavljevic, I. ^{[1
]}

Corrion, A. L. ^{[1
]}

Brown, D. F. ^{[1
]}

Willadsen, P. J. ^{[1
]}

Butler, C. ^{[1
]}

Schmitz, A. ^{[1
]}

Kim, S. ^{[1
]}

Lee, V. ^{[2
]}

Ohoka, A. ^{[2
]}

Asbeck, P. M. ^{[2
]}

Micovic, M. ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

[2] Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 08期

关键词：

Double heterojunction (DH); electron velocity enhancement; GaN; high-electron-mobility transistors (HEMTs); lateral scaling; ohmic regrowth;

D O I：

10.1109/LED.2011.2158386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report the first experimental observation of electron velocity enhancement by aggressive lateral scaling of GaN HEMTs. Through reduction of the source-drain distance down to 170 nm using n(+)-GaN ohmic regrowth, 45-nm gate AlN/GaN/Al0.08Ga0.92N HEMTs exhibited an extremely small on resistance of 0.44 Omega . mm, a high maximum drain current density of 2.3 A/mm, a high peak extrinsic transconductance of 905 mS/mm, and a record f(T)/f(max) of 260/394 GHz. Delay time analysis showed that the outstanding f(T) was mainly due to significantly reduced electron transit time at higher drain-source voltages resulting from suppressed drain delay and enhanced electron velocity in the laterally scaled GaN HEMTs.

引用

页码：1074 / 1076

页数：3

共 11 条

[1] High-mobility window for two-dimensional electron gases at ultrathin AlN/GaN heterojunctions [J].