Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience

被引：8

作者：

Dong, Chengyuan ^{[1
]}

Xu, Jianeng ^{[1
]}

Zhou, Yan ^{[1
]}

Zhang, Ying ^{[1
]}

Xie, Haiting ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Elect Engn, Shanghai 200240, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2019年 / 153卷

基金：

中国国家自然科学基金;

关键词：

Amorphous InGaZnO; Thin film transistor; Light-illumination stability; Ambient gases; INSTABILITY; DEPENDENCE; BIAS;

D O I：

10.1016/j.sse.2018.12.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The light-illumination stability of amorphous InGaZnO Thin Film Transistors (a-IGZO TFTs) in oxygen and moisture ambience was in-depth characterized by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. With the illuminated light wavelength decreasing, both I-V and C-V curves shifted negatively. When the ambient oxygen content or moisture level increased, the a-IGZO TFTs exhibited more stable properties under light illumination. A qualitative model was proposed to explain the related physical mechanism. The higher oxygen content or moisture level benefited the light-illumination-induced oxygen adsorption at back channels of a-IGZO TFTs and prevented the formation of oxygen vacancies (V-o) in channel layers; the V-o variation with the light illumination became more difficult and hence led to better light-illumination stability of the corresponding TFT devices.

引用

页码：74 / 78

页数：5

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