Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography

被引：3

作者：

Teteris, J ^{[1
]}

Kuzmina, I ^{[1
]}

机构：

[1] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia

来源：

OPTICAL ORGANIC AND INORGANIC MATERIALS | 2001年 / 4415卷

关键词：

chalcogenide semiconductors; amorphous films; photoresists; electron-beam lithography; photoinduced processes; holography;

D O I：

10.1117/12.425513

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photo- and electron beam induced changes in solubility of amorphous chalcogenide semiconductor As-S-Se and As2S3 thin films have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.

引用

页码：54 / 59

页数：6

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