Structural and optical properties of n-type porous silicon - Effect of HF concentration

被引：0
|
作者：
Jeyakumaran, N. [1 ]
Natarajan, B.
Ramamurthy, S.
Vasu, V.
机构：
[1] VHNSN Coll, Dept Phys, Virudunagar 626001, Tamil Nadu, India
[2] SACS MAVMM Engn Coll, Dept Phys, Madurai 625301, Tamil Nadu, India
[3] Gandhigram Rural Univ, Dept Phys, Gandhigram 624302, Tamil Nadu, India
[4] Madurai Kamaraj Univ Coll, Dept Phys, Madurai 625002, Tamil Nadu, India
来源：
SURFACE REVIEW AND LETTERS | 2007年 / 14卷 / 02期
关键词：
concentration; hydrogen bonds; porous silicon; porosity; peak intensity; lattice parameter; luminescence;
D O I：
10.1142/S0218625X07009384
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Porous silicon layers have been prepared from n-type silicon wafers of ( 100) orientation. SEM, XRD, FTIR, and PL have been used to characterize the morphological and optical properties of porous silicon. The influence of varying HF concentration in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with HF: ethanol concentration ratio and attain maximum for 1: 2 ratio and then decreases.
引用
收藏
页码：293 / 300
页数：8
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