Promising high-thermal-conductivity substrate material for high-power electronic device: silicon nitride ceramics

被引:88
作者
Hu, Feng [1 ]
Xie, Zhi-Peng [1 ]
Zhang, Jian [1 ]
Hu, Zun-Lan [1 ]
An, Di [1 ]
机构
[1] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
Silicon nitride ceramics; High thermal conductivity; Preparation technique; MECHANICAL-PROPERTIES; ALUMINUM NITRIDE; SI3N4; CERAMICS; SI POWDER; STRUCTURAL-CHARACTERIZATION; ADDITIVE COMPOSITION; MGSIN2; ADDITION; OXYGEN-CONTENT; BETA-SI3N4; GLASSES;
D O I
10.1007/s12598-020-01376-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-thermal-conductivity silicon nitride ceramic substrates are indispensable components for next-generation high-power electronic devices because of their excellent mechanical properties and high thermal conductivities, which make them suitable for applications in complex and extreme environments. Here, we present an overview of the recent developments in the preparation of high-thermal-conductivity silicon nitride ceramics. First, the factors affecting the thermal conductivity of silicon nitride ceramics are described. These include lattice oxygen and grain boundary phases, as well the oxygen content of the crystal lattice, which is the main influencing factor. Then, the methods to prepare high-thermal-conductivity silicon nitride ceramics are presented. Recent work on the preparation of high-thermal-conductivity silicon nitride is described in detail, including the raw materials used and the forming and sintering processes. Although great progress has been made, the development of a high-quality, low-cost fabrication process remains a challenge. Nevertheless, we believe that high-thermal-conductivity silicon nitride substrates are promising for massive practical applications in the next generation of high-power electronic devices.
引用
收藏
页码:463 / 478
页数:16
相关论文
共 102 条
[1]   Superior thermal conductivity of single-layer graphene [J].
Balandin, Alexander A. ;
Ghosh, Suchismita ;
Bao, Wenzhong ;
Calizo, Irene ;
Teweldebrhan, Desalegne ;
Miao, Feng ;
Lau, Chun Ning .
NANO LETTERS, 2008, 8 (03) :902-907
[2]   Silicon Nitride Composites with Different Nanocarbon Additives [J].
Balazsi, Csaba .
JOURNAL OF THE KOREAN CERAMIC SOCIETY, 2012, 49 (04) :352-362
[3]   Thermal Conductivity and Mechanical Property of Si3N4 Ceramics Sintered with CeF3/LaF3 Additives [J].
Bing, Bai ;
Fu, Teng ;
Ning, Xiaoshan .
CHINESE CERAMICS COMMUNICATIONS, 2010, 105-106 :171-174
[4]   COVALENT HIGH-PERFORMANCE CERAMICS [J].
BOCKER, WDG ;
HAMMINGER, R ;
HEINRICH, J ;
HUBER, J ;
ROOSEN, A .
ADVANCED MATERIALS, 1992, 4 (03) :169-&
[5]   State of the art of high temperature power electronics [J].
Buttay, Cyril ;
Planson, Dominique ;
Allard, Bruno ;
Bergogne, Dominique ;
Bevilacqua, Pascal ;
Joubert, Charles ;
Lazar, Mihai ;
Martin, Christian ;
Morel, Herve ;
Tournier, Dominique ;
Raynaud, Christophe .
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (04) :283-288
[6]   Effect of single-walled carbon nanotubes on thermal and electrical properties of silicon nitride processed using spark plasma sintering [J].
Corral, Erica L. ;
Wang, Hsin ;
Garay, Javier ;
Munir, Zuhair ;
Barrera, Enrique V. .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2011, 31 (03) :391-400
[7]   Silicon Carbide as a Platform for Power Electronics [J].
Eddy, C. R., Jr. ;
Gaskill, D. K. .
SCIENCE, 2009, 324 (5933) :1398-1400
[8]   CERAMIC-BASED NANOCOMPOSITES FOR FUNCTIONAL APPLICATIONS [J].
Fenyi, Balazs ;
Koszor, Orsolya ;
Balazsi, Csaba .
NANO, 2008, 3 (05) :323-327
[9]   Microstructural control of β-silicon nitride ceramics to improve thermal conductivity [J].
Furuya, K ;
Munakata, F ;
Matsuo, K ;
Akimune, Y ;
Ye, J ;
Okada, A .
JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY, 2002, 69 (03) :873-879
[10]   The rise of graphene [J].
Geim, A. K. ;
Novoselov, K. S. .
NATURE MATERIALS, 2007, 6 (03) :183-191