Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces

被引:28
作者
Gritsenko, VA
Shaposhnikov, AV
Kwok, WM
Wong, H
Jidomirov, GM
机构
[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
[2] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[3] Russian Acad Sci, Inst Catalysis, Siberian Branch, Novosibirsk 630090, Russia
[4] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
关键词
valence band; silicon nitride; X-ray photoelectron spectroscopy;
D O I
10.1016/S0040-6090(03)00601-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The valence band electronic structure of silicon nitride (Si3N4) is studied using the first principal quantum chemical calculation, X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Assuming that the valence band is formed with N 2p and Si 3s, 3p and 3d electrons and based on the XPS and UPS results, the valance band offset at the Si/Si3N4 interface was estimated to be 1.5+/-0.2 eV. This hole barrier explains the hole dominating conduction in Si/Si3N4 structure when a positive potential is applied to the silicon substrate. In addition, the UPS study reveals that the valence band offset at the Si3N4/silicon oxide inter-face is 2.5+/-0.2 eV, (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:135 / 139
页数:5
相关论文
共 24 条
[1]   NEW RESULTS ON ELECTRON INJECTION, HOLE INJECTION, AND TRAPPING IN MONOS NONVOLATILE MEMORY DEVICES [J].
AGARWAL, AK ;
WHITE, MH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) :941-951
[2]   Transient conduction in multidielectric silicon-oxide-nitride-oxide semiconductor structures [J].
Bachhofer, H ;
Reisinger, H ;
Bertagnolli, E ;
von Philipsborn, H .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) :2791-2800
[3]  
Band I. M., 1979, Atomic Data and Nuclear Data Tables, V23, P443, DOI 10.1016/0092-640X(79)90027-5
[4]   DENSITY-FUNCTIONAL EXCHANGE-ENERGY APPROXIMATION WITH CORRECT ASYMPTOTIC-BEHAVIOR [J].
BECKE, AD .
PHYSICAL REVIEW A, 1988, 38 (06) :3098-3100
[5]   Design considerations in scaled SONOS nonvolatile memory devices [J].
Bu, JK ;
White, MH .
SOLID-STATE ELECTRONICS, 2001, 45 (01) :113-120
[6]   CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS [J].
DIMARIA, DJ ;
ARNETT, PC .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) :227-244
[7]  
Ginovker A S, 1973, MIKROELEKTRONIKA, V2, P283
[8]   2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE [J].
GINOVKER, AS ;
GRITSENKO, VA ;
SINITSA, SP .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :489-495
[9]   PHOTOEMISSION OF HOLES FROM SILICON INTO SILICON DIOXIDE [J].
GOODMAN, AM .
PHYSICAL REVIEW, 1966, 152 (02) :780-&
[10]   PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDE [J].
GOODMAN, AM .
APPLIED PHYSICS LETTERS, 1968, 13 (08) :275-&