The electron Lande g-factor in GaAs-(Ga,Al)As cylindrical quantum dots

In this work we study the Lande g-factor of a GaAs-(Ga,Al)As cylindrical quantum dot under an axis-parallel applied magnetic field, using the Ogg-McCombe effective Hamiltonian[1] for the electron in the conduction band of the GaAs-(Ga,Al)As heterostructure, which includes nonparabolicity and anisotropy effects. The quantum dot is assumed to consist of a finite length cylinder of GaAs surrounded by (Ga,Al)As. Our calculations are performed for different radii and lengths of the cylindrical GaAs-(Ga,Al)As quantum pillbox and as function of the applied magnetic field. Our results are in good agreement with previous theoretical results[2] in the limiting geometry of a quantum well.