Development and characterization of reduced graphene oxide films for transient electronics

被引:0
|
作者
Sheikh, Rasel [1 ]
Bhatkar, Omkar [1 ]
Smith, David [1 ]
Rizvi, Reza [1 ]
机构
[1] Univ Toledo, Dept Mech Ind & Mfg Engn, 2801 W Bancroft St,MS 312, Toledo, OH 43606 USA
来源
BEHAVIOR AND MECHANICS OF MULTIFUNCTIONAL MATERIALS AND COMPOSITES XII | 2018年 / 10596卷
关键词
Graphene; Graphene Oxide; Functionally graded; transient electronics;
D O I
10.1117/12.2296786
中图分类号
TB33 [复合材料];
学科分类号
摘要
Emerging interests in hardware security as well as environmental concerns have given rise to the field of transient or temporary electronics, which can be decommissioned by an external stimulus with minimal impact to the surrounding environment. In this study, an all graphene based film is produced by a one-step deposition process. The conversion of graphene oxide (GO) to reduced graphene oxide (rGO) depends on an interfacial reduction reaction. Control of processing conditions such as the underlying substrate, pH of GO and the film drying environment results in an ability to tailor the internal architecture of the films and their electronic properties. Furthermore, the ability to create masks for selective reduction of GO during deposition was also demonstrated, which was used to create intricate yet well-defined patterns and connections required in electronic circuits and devices. All graphene based freestanding films with selectively reduced GO were used in transient electronics application as circuitry and RFID tag patterns.
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页数:4
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