The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer

被引：0

作者：

Shi, GX ^{[1
]}

Xu, B ^{[1
]}

Jin, P ^{[1
]}

Ye, XL ^{[1
]}

Cui, CX ^{[1
]}

Zhang, CL ^{[1
]}

Wu, J ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5 | 2005年 / 475-479卷

关键词：

quantum dots; strain buffer layer; InAs; photoluminescence;

D O I：

10.4028/www.scientific.net/MSF.475-479.1791

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural and photoluminescence (PL) properties of the InAs quantum dots (QDs) grown on a combined InAlAs and GaAs strained buffer layer have been investigated by AFM and PL measurements. The dependence of the critical thickness for the transition from 2D to 3D on the thickness of GaAs layer is demonstrated directly by RHEED. The effects of the introduced-InAlAs layer on the density and the aspect ratio of QDs have been discussed.

引用

页码：1791 / 1794

页数：4

共 9 条

[1] Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
Arzberger, M
Käsberger, U
Böhm, G
Abstreiter, G
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (25) : 3968 - 3970
[2] Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs-GaAs-InGaAs-InAs heterostructure laser
Chung, T
Walter, G
Holonyak, N
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (27) : 4500 - 4502
[3] INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE
GRUNDMANN, M
STIER, O
BIMBERG, D
[J]. PHYSICAL REVIEW B, 1995, 52 (16) : 11969 - 11981
[4] Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
Huffaker, DL
Deppe, DG
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (04) : 520 - 522
[5] Continuous-wave low-threshold performance of 1.3-μm InGaAs-GaAs quantum-dot lasers
Huffaker, DL
Park, G
Zou, ZZ
Shchekin, OB
Deppe, DG
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (03) : 452 - 461
[6] Optical spectroscopy of single InAs/InGaAs quantum dots in a quantum well
Kaiser, S
Mensing, T
Worschech, L
Klopf, F
Reithmaier, JP
Forchel, A
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (26) : 4898 - 4900
[7] Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates
Li, HX
Zhuang, QD
Wang, ZG
Daniels-Race, T
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 188 - 191
[8] Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure
Liu, HY
Hopkinson, M
Harrison, CN
Steer, MJ
Frith, R
Sellers, IR
Mowbray, DJ
Skolnick, MS
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) : 2931 - 2936
[9] Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
Zhukov, AE
Kovsh, AR
Ustinov, VM
Shernyakov, YM
Mikhrin, SS
Maleev, NA
Kondrat'eva, EY
Livshits, DA
Maximov, MV
Volovik, BV
Bedarev, DA
Musikhin, YG
Ledentsov, NN
Kop'ev, PS
Alferov, ZI
Bimberg, D
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (11) : 1345 - 1347

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