Effect of alpha-radiation on the photoluminescence of porous silicon

被引：0

作者：

Lebedev, AA

Ivanov, AM

Remenyuk, AD

Rud, YV

机构：

来源：

SEMICONDUCTORS | 1996年 / 30卷 / 01期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The dose dependence of the photoluminescence of porous silicon under alpha irradiation was investigated. It was found that the form and the position of the photoluminescence spectrum on the energy scale do not depend on the alpha irradiation. The intensity of the photoluminescence decreases exponentially with increasing alpha-irradiation dose. (C) 1996 American Institute of Physics.

引用

页码：107 / 108

页数：2