Monte Carlo simulation of near-field terahertz emission from semiconductors

被引：5

作者：

Corzo-Garcia, S. C. ^{[1
]}

Hernandez-Serrano, A. I. ^{[1
]}

Castro-Camus, E. ^{[1
]}

Mitrofanov, O. ^{[2
]}

机构：

[1] Ctr Invest Opt AC, Loma Bosque 115, Guanajuato 37150, Mexico

[2] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

来源：

PHYSICAL REVIEW B | 2016年 / 94卷 / 04期

关键词：

SURFACE; GENERATION; RADIATION; WAVES; DIFFUSION; PULSES; PROBE; MASK;

D O I：

10.1103/PhysRevB.94.045301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We simulated the carrier dynamics in InGaAs after ultrafast photoexcitation. By using a finite-difference time-domain approach we were able to analyze the near terahertz field emission caused by the motion of such carriers. We found that both the current parallel and normal to the interface take a relevant role in the terahertz emission. We also found that the ballistic motion of the carriers after photoexcitation dominates the emission rather than diffusion.

引用

页数：5

共 23 条

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