Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy

被引：12

作者：

Aho, A. ^{[1
]}

Korpijarvi, V. -M ^{[1
]}

Tukiainen, A. ^{[1
]}

Puustinen, J. ^{[1
]}

Guina, M. ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FI-33720 Tampere, Finland

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 21期

关键词：

MBE GROWTH; RF; QUALITY; GANAS;

D O I：

10.1063/1.4903318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a Maxwell-Boltzmann electron energy distribution based model for the incorporation rate of nitrogen into GaInNAs grown by molecular beam epitaxy (MBE) using a radio frequency plasma source. Nitrogen concentration is predicted as a function of radio-frequency system primary resistance, N flow, and RF power, and group III growth rate. The semi-empirical model is shown to be repeatable with a maximum error of 6%. The model was validated for two different MBE systems by growing GaInNAs on GaAs(100) with variable nitrogen composition of 0%-6%. (C) 2014 AIP Publishing LLC.

引用

页数：6

共 27 条

[1] Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells [J].