Room Temperature Bonding and Debonding of Ultra-Thin Glass Substrates for Fabrication of LCD

被引:3
作者
Takeuchi, Kai [1 ]
Fujino, Masahisa [1 ]
Suga, Tadatomo [1 ]
机构
[1] Univ Tokyo, Sch Engn, Tokyo, Japan
来源
2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2016年
关键词
Glass; Bonding processes; Thin film transistors; Displays;
D O I
10.1109/ECTC.2016.145
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study we established a new process of the bonding and debonidng of the glasses for the handling of the ultra thin glass substrates. On the basis of the Surface Activated Bonding (SAB) method, the glasses were bonded using the Si and Fe intermediate layers at room temperature. The bond strength was evaluated before and after heating at 450 degrees C, and the results showed the bond strength can be controllable by the bonding conditions such as the Si deposition, the ion beam irradiation and the bonding ambience. Additionally, the SAM images and the XPS analyses indicated that the voids in the bonding interfaces affected on the easy lift-off process without the residue on the glass surfaces. The proposed method would be an alternative of the temporary bonding method of the glasses in the fabrication process of the display devices.
引用
收藏
页码:1284 / 1289
页数:6
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