Formation of CNx thin films by reactive pulsed laser deposition assisted by electron cyclotron resonance microwave discharge

被引:10
作者
Shi, W
Wu, JD [1 ]
Sun, J
Ling, H
Ying, ZF
Ding, XM
Zhou, ZY
Li, FM
机构
[1] Fudan Univ, State Key Lab Mat Modificat Laser Ion & Electron, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
[3] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[4] Fudan Univ, State Key Lab Appl Surface Phys, Shanghai 200433, Peoples R China
[5] Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2001年 / 73卷 / 05期
关键词
D O I
10.1007/s003390100806
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous carbon nitride thin films were synthesized by pulsed laser deposition combined with electron cyclotron resonance (ECR) microwave discharge in nitrogen gas. The ECR discharge supplies active nitrogen species in the deposition environment and to the growing film surface, enhancing the film growth in complex processes accompanied by chemical reaction. The synthesized films were characterized by Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectroscopy (FTIR), and Raman spectroscopy. The films were determined to consist purely of carbon and nitrogen with a nitrogen concentration of 42%, and have a thickness of 550nm over which carbon and nitrogen are well distributed. Structural characterizations based on XPS, FTIR and Raman analysis showed that these films appear to contain several bonding configurations between carbon and nitrogen with a small amount of C drop N bonds compared with other bonding states.
引用
收藏
页码:605 / 608
页数:4
相关论文
共 33 条
[1]   Preparation of amorphous CNx thin films by pulsed laser deposition using a radio frequency radical beam source [J].
Aoi, Y ;
Ono, K ;
Kamijo, E .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (04) :2318-2322
[2]   FORMATION OF CARBON NITRIDE FILMS ON SI(100) SUBSTRATES BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED VAPOR-DEPOSITION [J].
BOUSETTA, A ;
LU, M ;
BENSAOULA, A ;
SCHULTZ, A .
APPLIED PHYSICS LETTERS, 1994, 65 (06) :696-698
[3]  
BRIGGS D, 1990, PRACTICAL SURFACE AN, V1
[4]   Study of nitrogen pressure effect on the laser-deposited amorphous carbon films [J].
Bulir, J ;
Jelinek, M ;
Vorlicek, V ;
Zemek, J ;
Perina, V .
THIN SOLID FILMS, 1997, 292 (1-2) :318-323
[5]   Deposition of C-N films by reactive laser ablation [J].
DAnna, E ;
Luches, A ;
Perrone, A ;
Acquaviva, S ;
Alexandrescu, R ;
Mihailescu, IN ;
Zemek, J ;
Majni, G .
APPLIED SURFACE SCIENCE, 1996, 106 :126-131
[6]   Characterization of carbon nitride thin films deposited by a combined RF and DC plasma beam [J].
Dinescu, G ;
Aldea, E ;
Musa, G ;
van de Sanden, MCM ;
de Graaf, A ;
Ghica, C ;
Gartner, M ;
Andrei, A .
THIN SOLID FILMS, 1998, 325 (1-2) :123-129
[7]  
FUJIMOTO F, 1993, JPN J APPL PHYS, V32, P420
[8]   Electron spectroscopic study of C-N bond formation by low-energy nitrogen ion implantation of graphite and diamond surfaces [J].
Gouzman, I ;
Brener, R ;
Hoffman, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (02) :411-420
[9]   STRUCTURAL AND OPTICAL-PROPERTIES OF AMORPHOUS-CARBON NITRIDE [J].
HAN, HX ;
FELDMAN, BJ .
SOLID STATE COMMUNICATIONS, 1988, 65 (09) :921-923
[10]  
KAUFMAN JH, 1989, PHYS REV B, V39, P39