Time step truncation in direct simulation Monte Carlo for semiconductors

被引:12
|
作者
Muscato, O [1 ]
Wagner, W
机构
[1] Dipartimento Matemat & Informat, Catania, Italy
[2] Weierstr Inst Appl Anal & Stochast, Berlin, Germany
关键词
electrically operated devices; semiconductor devices; Monte Carlo simulations;
D O I
10.1108/03321640510615652
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
Purpose - To provide an accurate analysis of the systematic error introduced by the constant time technique free flight mechanism, due to the choice of the time step and number particles. Design/methodology/approach - A homogeneous (bulk) silicon semiconductor is studied by using direct simulation Monte Carlo (DSMC). Findings - The systematic error turns out to be of the first order with respect to the time step. The efficiency of the method is tackled. Research limitations/implications - The analysis is limited to the bulk case. Future researches will consider non homogeneous devices. Originality/value - An accurate analysis of an "old" free flight mechanism has been performed, and its limits have been stated.
引用
收藏
页码:1351 / 1366
页数:16
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