A Simulation Model for SiC Power MOSFET Based on Surface Potential

被引：0
作者：
Nakamura, Yohei [1 ]
Shintani, Michihiro
Oishi, Kazuki
Sato, Takashi
Hikihara, Takashi [1 ]
机构：
[1] Kyoto Univ, Dept Grad Sch Engn, Nishikyo Ku, Kyoto 6158510, Japan
来源：
2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2016年
关键词：
Silicon Carbide; Power MOSFET; Device modeling; Surface potential; Circuit simulation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we propose a surface-potential-based simulation model of SiC power MOSFETs for accurate circuit simulation. By considering physical structure and behavior of vertical power SiC MOSFETs, the proposed model reproduces static and dynamic characteristics upon wide range of bias voltages. Through experiments using a commercial SiC power MOSFET, good agreements have been observed between measurement and simulation in I-V, C-V characteristics. Good match in transient behavior beyond 1MHz is also confirmed.
引用
收藏
页码：121 / 124
页数：4
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