Cubic MgxZn1-xO films grown on SiO2 substrates

Cubic MgxZn1-xO thin films were deposited on amorphous silicon dioxide substrate by reactive electron beam evaporation (REBE) at low temperature (250 degrees C). The characterizations of crystalline structure and morphology of the ternary films demonstrated that the cubic MgxZn1-xO films are of highly (001) orientation and have uniform surface. The cubic Mg0.83Zn0.17O film deposited on quartz demonstrates wide band gap (6.45 eV) and has very high transparency (>95%) in broad wavelength range from ultraviolet (0.3 mu m) to mid-infrared light (5.5 mu m). The refractive indices for the cubic MgxZn1-xO decrease as Mg fraction increases. The characters of low optical absorption in broad wavelength range and feasibility of changing refractive index by Mg fraction variation in the ternary MgxZn1-xO films could render potential applications in integrated optical devices. (c) 2005 Elsevier B.V. All rights reserved.