Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer

被引：38

作者：

Chen, G. ^{[1
]}

Sanduijav, B. ^{[1
]}

Matei, D. ^{[1
]}

Springholz, G. ^{[1
]}

Scopece, D. ^{[2
,3
]}

Beck, M. J. ^{[4
]}

Montalenti, F. ^{[2
,3
]}

Miglio, L. ^{[2
,3
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

[2] Univ Milano Bicocca, L NESS, Milan, Italy

[3] Univ Milano Bicocca, Dept Mat Sci, Milan, Italy

[4] Univ Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USA

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 05期

关键词：

SHAPE TRANSITION; ISLANDS; SI(001); SURFACES; GROWTH; PYRAMIDS; SINGLE; DOMES;

D O I：

10.1103/PhysRevLett.108.055503

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ge growth on high-indexed Si (1110) is shown to result in the spontaneous formation of a perfectly {105} faceted one-dimensional nanoripple structure. This evolution differs from the usual Stranski-Krastanow growth mode because from initial ripple seeds a faceted Ge layer is formed that extends down to the heterointerface. Ab initio calculations reveal that ripple formation is mainly driven by lowering of surface energy rather than by elastic strain relief and the onset is governed by the edge energy of the ripple facets. Wavelike ripple replication is identified as an effective kinetic pathway for the transformation process.

引用

页数：5

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