Nanopackaging of Si(100)H Wafer for Atomic-Scale Investigations

被引:4
|
作者
Sordes, Delphine [1 ]
Thuaire, Aurelie [2 ,3 ]
Reynaud, Patrick [2 ,3 ]
Rauer, Caroline [2 ,3 ]
Hartmann, Jean-Michel [2 ,3 ]
Moriceau, Hubert [2 ,3 ]
Rolland, Emmanuel [2 ,3 ]
Kolmer, Marek [4 ]
Szymonski, Marek [4 ]
Durand, Corentin [5 ]
Joachim, Christian [5 ]
Cheramy, Severine [2 ,3 ]
Baillin, Xavier [2 ,3 ]
机构
[1] CEATech Midi Pyrenees, Campus INSA, Bat GM 135,Ave Rangueil, F-31400 Toulouse, France
[2] Univ Grenoble Alpes, F-38000 Grenoble, France
[3] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
[4] Jagiellonian Univ, Ctr Nanometer Scale Sci & Adv Mat, NANOSAM, Fac Phys Astron & Appl Comp Sci, St Lojasiewicza St 11, PL-30348 Krakow, Poland
[5] CNRS, CEMES, PicoLab, 29 Rue Marvig,BP 94347, F-31055 Toulouse, France
来源
ON-SURFACE ATOMIC WIRES AND LOGIC GATES | 2017年
关键词
INFRARED-SPECTROSCOPY; EPITAXIAL-GROWTH; CLEAN ROOM; SILICON; HYDROGEN; SURFACE; SI; CONDUCTANCE; ENVIRONMENT; FABRICATION;
D O I
10.1007/978-3-319-51847-3_2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Ultra-high vacuum (UHV) investigations have demonstrated a successful development of atomic nanostructures. The scanning tunneling microscope (STM) provides surface study at the atomic scale. However, the surface preparation is a crucial experimental step and requires a complex protocol conducted in situ in a UHV chamber. Surface contamination, atomic roughness, and defect density must be controlled in order to ensure the reliability of advanced UHV experiments. Consequently, a packaging for nanoscale devices has been developed in a microelectronic clean room environment enabling the particle density and contaminant concentration control. This nanopackaging solution is proposed in order to obtain a Si(001)-(2x1):H reconstructed surface. This surface is protected by a temporary silicon cap. The nanopackaging process consists in a direct bonding of two passivated silicon surfaces and is followed by a wafer dicing step into 1-cm(2) dies. Samples can be stored, shipped, and in situ opened without any additional treatment. A specific procedure has been developed in order to open the nanopackaged samples in a UHV debonder, mounted in the load-lock chamber of a low-temperature STM system (LT-STM). Statistical large scan LT-UHV-SEM images and LT-UHV-STM images have been obtained enabling the surface study at the atomic resolution.
引用
收藏
页码:25 / 51
页数:27
相关论文
共 50 条
  • [21] STM and LEED observations of erbium silicide nanostructures grown on Si(100) surface: atomic-scale understandings
    Cai, Q
    Yang, JS
    Fu, Y
    Wang, YY
    Wang, XD
    APPLIED SURFACE SCIENCE, 2002, 190 (1-4) : 157 - 160
  • [22] Atomic-scale characterization of nitridation processes on Si(100)-2 x 1 surfaces by radical nitrogen
    Matsushita, D
    Ikeda, H
    Sakai, A
    Zaima, S
    Yasuda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4B): : 2827 - 2829
  • [23] Atomic-scale control of hydrogen bonding on a bare Si(100)-2x1 surface
    Labidi, Hatem
    Kantorovich, Lev
    Riedel, Damien
    PHYSICAL REVIEW B, 2012, 86 (16)
  • [24] Atomic-scale model of c-Si/a-Si:H interfaces -: art. no. 075301
    Tosolini, M
    Colombo, L
    Peressi, M
    PHYSICAL REVIEW B, 2004, 69 (07)
  • [25] Atomic-scale Planarization of Ge (111), (110) and (100) Surfaces
    Nishimura, Tomonori
    Lee, ChoongHyun
    Yajima, Takeaki
    Nagashio, Kosuke
    Toriumi, Akira
    2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), 2014, : 127 - 128
  • [26] Atomic-scale characterization of Si(110)/6H-SiC(0001) heterostructure by HRTEM
    Li, L. B.
    Chen, Z. M.
    Zang, Y.
    Feng, S.
    MATERIALS LETTERS, 2016, 163 : 47 - 50
  • [27] Atomic-scale modification on Si(111)7 × 7 surfaces
    Ma, Z.L.
    Liu, N.
    Zhao, W.B.
    Gu, Q.J.
    Ge, X.
    Xue, Z.Q.
    Pang, S.J.
    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1995, 13 (03): : 1212 - 1215
  • [28] Atomic-scale dynamics of atoms and dimers on the Si(001) surface
    Swartzentruber, BS
    SURFACE SCIENCE, 1997, 386 (1-3) : 195 - 206
  • [29] Electron-induced H atom desorption patterns created with a scanning tunneling microscope: Implications for controlled atomic-scale patterning on H-Si(100)
    Tong, Xiao
    Wolkow, Robert A.
    SURFACE SCIENCE, 2006, 600 (16) : L199 - L203
  • [30] Atomic-scale analysis of hydrogen bond breaking from Si(100):H induced by optical electronic excitation -: art. no. 233304
    Riedel, D
    Mayne, AJ
    Dujardin, G
    PHYSICAL REVIEW B, 2005, 72 (23):