Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide

被引：103
作者：
Lalic, N [1 ]
Linnros, J [1 ]
机构：
[1] Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden
来源：
JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期
关键词：
silicon nanocrystal; electroluminescence; LED; ion implantation;
D O I：
10.1016/S0022-2313(98)00109-4
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Light emitting diodes (LED), continuously operable at room temperature, have been fabricated by Si (+) ion implantation into SiO2 and subsequent annealing in order to form Si nanocrystals. A highly doped poly-Si layer was used to enhance injection into nanocrystals. Visible electroluminescence (EL) was observed from the LEDs with oxide thickness less than or equal to 180 Angstrom for bias voltages above 8 V. The EL decay transient was similar to stretched-exponential decays observed for photoluminescence (PL) from Si nanocrystals. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：263 / 267
页数：5
相关论文
共 16 条
  • [11] ELECTROLUMINESCENT POROUS SILICON DEVICE WITH AN EXTERNAL QUANTUM EFFICIENCY GREATER-THAN 0.1-PERCENT UNDER CW OPERATION
    LONI, A
    SIMONS, AJ
    COX, TI
    CALCOTT, PDJ
    CANHAM, LT
    [J]. ELECTRONICS LETTERS, 1995, 31 (15) : 1288 - 1289
  • [12] Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2
    Min, KS
    Shcheglov, KV
    Yang, CM
    Atwater, HA
    Brongersma, ML
    Polman, A
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (14) : 2033 - 2035
  • [13] Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers
    Rebohle, L
    vonBorany, J
    Yankov, RA
    Skorupa, W
    Tyschenko, IE
    Frob, H
    Leo, K
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (19) : 2809 - 2811
  • [14] SIZE, SHAPE, AND COMPOSITION OF LUMINESCENT SPECIES IN OXIDIZED SI NANOCRYSTALS AND H-PASSIVATED POROUS SI
    SCHUPPLER, S
    FRIEDMAN, SL
    MARCUS, MA
    ADLER, DL
    XIE, YH
    ROSS, FM
    CHABAL, YJ
    HARRIS, TD
    BRUS, LE
    BROWN, WL
    CHABAN, EE
    SZAJOWSKI, PF
    CHRISTMAN, SB
    CITRIN, PH
    [J]. PHYSICAL REVIEW B, 1995, 52 (07): : 4910 - 4925
  • [15] Stable and efficient electroluminescence from a porous silicon-based bipolar device
    Tsybeskov, L
    Duttagupta, SP
    Hirschman, KD
    Fauchet, PM
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (15) : 2058 - 2060
  • [16] MECHANISMS OF VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON
    VIAL, JC
    BSIESY, A
    GASPARD, F
    HERINO, R
    LIGEON, M
    MULLER, F
    ROMESTAIN, R
    MACFARLANE, RM
    [J]. PHYSICAL REVIEW B, 1992, 45 (24): : 14171 - 14176
12