Molecular Beam Epitaxy-Grown SnSe in the Rock-Salt Structure: An Artificial Topological Crystalline Insulator Material

被引：91

作者：

Wang, Zhenyu ^{[1
]}

Wang, Jianfeng ^{[1
]}

Zang, Yunyi ^{[1
]}

Zhang, Qinghua ^{[2
]}

Shi, Jin-An ^{[2
]}

Jiang, Tian ^{[1
,3
]}

Gong, Yan ^{[1
]}

Song, Can-Li ^{[1
]}

Ji, Shuai-Hua ^{[1
,4
]}

Wang, Li-Li ^{[1
,4
]}

Gu, Lin ^{[2
,4
]}

He, Ke ^{[1
,4
]}

Duan, Wenhui ^{[1
,4
]}

Ma, Xucun ^{[1
,4
]}

Chen, Xi ^{[1
,4
]}

Xue, Qi-Kun ^{[1
,4
]}

机构：

[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[3] Natl Univ Def Technol, Coll Optoelect Sci & Engn, Changsha 410073, Hunan, Peoples R China

[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 28期

基金：

中国国家自然科学基金;

关键词：

molecular beam epitaxy; rock-salt structures; SnSe films; topological crystalline insulators; TOTAL-ENERGY CALCULATIONS; BI2SE3; STATES;

D O I：

10.1002/adma.201501676

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new topological crystalline insulator material, SnSe in the rock-salt structure, is obtained using molecular beam epitaxy. The thermodynamically unstable rock-salt SnSe phase is stabilized in epitaxial films up to 20 nm by a Bi2Se3 substrate. Dirac surface states are observed at both the Γ¯ and the M¯ points using angle-resolved photoemission spectroscopy; this confirms the topological crystalline insulator phase of the films. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：4150 / 4154

页数：5

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