Molecular Beam Epitaxy-Grown SnSe in the Rock-Salt Structure: An Artificial Topological Crystalline Insulator Material

被引:90
作者
Wang, Zhenyu [1 ]
Wang, Jianfeng [1 ]
Zang, Yunyi [1 ]
Zhang, Qinghua [2 ]
Shi, Jin-An [2 ]
Jiang, Tian [1 ,3 ]
Gong, Yan [1 ]
Song, Can-Li [1 ]
Ji, Shuai-Hua [1 ,4 ]
Wang, Li-Li [1 ,4 ]
Gu, Lin [2 ,4 ]
He, Ke [1 ,4 ]
Duan, Wenhui [1 ,4 ]
Ma, Xucun [1 ,4 ]
Chen, Xi [1 ,4 ]
Xue, Qi-Kun [1 ,4 ]
机构
[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
[3] Natl Univ Def Technol, Coll Optoelect Sci & Engn, Changsha 410073, Hunan, Peoples R China
[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
molecular beam epitaxy; rock-salt structures; SnSe films; topological crystalline insulators; TOTAL-ENERGY CALCULATIONS; BI2SE3; STATES;
D O I
10.1002/adma.201501676
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:4150 / 4154
页数:5
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