Sample preparation of InGaAsP/InP-based lasers for plan-view transmission electron microscopy using selective chemical thinning

被引：3
|
作者：
Kallstenius, T [1 ]
机构：
[1] Uppsala Univ, Div Sci Mat, S-75221 Uppsala, Sweden
[2] Ericsson Components AB, Microelect Div, S-16481 Stockholm, Sweden
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 02期
关键词：
D O I：
10.1149/1.1391677
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A sample preparation method for transmission electron microscopy plan-views of InGaAsP/InP-based laser diodes based on selective chemical thinning is described. Using this method, it is possible to prepare samples with more than 50% of the active InGaAsP stripe electron transparent, The method is also comparably fast, simple, reliable, and will not introduce crystal defects in the sample. Examples of the use of this method for preparation of buried heterostructure laser diodes of bulk Fabry-Perot type are demonstrated. The technique is also applicable. to other types af laser diodes, such as multiquantum wells and distributed;feedback. (C) 1999 The Electrochemical Society. S0013-4651(98)05-076-9. All rights reserved.
引用
收藏
页码：758 / 760
页数：3
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