Separation of inverse spin hall effect and spin rectification effect by inverting spin injection direction in NiFe/ta bilayers film

被引：5

作者：

Wang, Qiuru ^{[1
]}

Zhang, Wanli ^{[1
]}

Peng, Bin ^{[1
]}

Zhang, Wenxu ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2016年 / 245卷

关键词：

SPINTRONICS; ELECTRONICS;

D O I：

10.1016/j.ssc.2016.07.016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The inverse spin Hall effect (ISHE) has been detected and separated from spin rectification effect (SRE) by inverting spin injection direction in metallic system. This work is based on the relation between the two effects and the spin injection direction: the sign of V-ISHE changes because of the reversing direction of spin injection while the V-SRE is independent on it. According to the different voltage signals before and after the spin injection inverted, the pure V-ISHE and V-SRE are calculated by utilizing the method of addition and subtraction. The signals can be separated in a wide range of frequency and power. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：15 / 19

页数：5

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