A diode for ferroelectric domain-wall motion

被引:83
|
作者
Whyte, J. R. [1 ]
Gregg, J. M. [1 ]
机构
[1] Queens Univ Belfast, Ctr Nanostructured Media, Sch Maths & Phys, Belfast BT7 1NN, Antrim, North Ireland
来源
NATURE COMMUNICATIONS | 2015年 / 6卷
基金
英国工程与自然科学研究理事会;
关键词
ELECTRON-GAS; CONDUCTION;
D O I
10.1038/ncomms8361
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
For over a decade, controlling domain-wall injection, motion and annihilation along nanowires has been the preserve of the nanomagnetics research community. Revolutionary technologies have resulted, like racetrack memory and domain-wall logic. Until recently, equivalent research in analogous ferroic materials did not seem important. However, with the discovery of sheet conduction, the control of domain walls in ferroelectrics has become vital for the future of what has been termed 'domain-wall electronics'. Here we report the creation of a ferroelectric domain-wall diode, which allows a single direction of motion for all domain walls, irrespective of their polarity, under a series of alternating electric field pulses. The diode's sawtooth morphology is central to its function. Domain walls can move readily in the direction in which thickness increases gradually, but are prevented from moving in the other direction by the sudden thickness increase at the sawtooth edge.
引用
收藏
页数:5
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