A diode for ferroelectric domain-wall motion

被引:83
|
作者
Whyte, J. R. [1 ]
Gregg, J. M. [1 ]
机构
[1] Queens Univ Belfast, Ctr Nanostructured Media, Sch Maths & Phys, Belfast BT7 1NN, Antrim, North Ireland
来源
NATURE COMMUNICATIONS | 2015年 / 6卷
基金
英国工程与自然科学研究理事会;
关键词
ELECTRON-GAS; CONDUCTION;
D O I
10.1038/ncomms8361
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
For over a decade, controlling domain-wall injection, motion and annihilation along nanowires has been the preserve of the nanomagnetics research community. Revolutionary technologies have resulted, like racetrack memory and domain-wall logic. Until recently, equivalent research in analogous ferroic materials did not seem important. However, with the discovery of sheet conduction, the control of domain walls in ferroelectrics has become vital for the future of what has been termed 'domain-wall electronics'. Here we report the creation of a ferroelectric domain-wall diode, which allows a single direction of motion for all domain walls, irrespective of their polarity, under a series of alternating electric field pulses. The diode's sawtooth morphology is central to its function. Domain walls can move readily in the direction in which thickness increases gradually, but are prevented from moving in the other direction by the sudden thickness increase at the sawtooth edge.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] Ferroelectric domain-wall logic units
    Wang, Jing
    Ma, Jing
    Huang, Houbing
    Ma, Ji
    Jafri, Hasnain Mehdi
    Fan, Yuanyuan
    Yang, Huayu
    Wang, Yue
    Chen, Mingfeng
    Liu, Di
    Zhang, Jinxing
    Lin, Yuan-Hua
    Chen, Long-Qing
    Yi, Di
    Nan, Ce-Wen
    NATURE COMMUNICATIONS, 2022, 13 (01)
  • [2] Controlling domain wall motion in ferroelectric thin films
    McGilly, L. J.
    Yudin, P.
    Feigl, L.
    Tagantsev, A. K.
    Setter, N.
    NATURE NANOTECHNOLOGY, 2015, 10 (02) : 145 - 150
  • [3] Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials
    Nataf, G. F.
    Guennou, M.
    Gregg, J. M.
    Meier, D.
    Hlinka, J.
    Salje, E. K. H.
    Kreisel, J.
    NATURE REVIEWS PHYSICS, 2020, 2 (11) : 634 - 648
  • [4] Ferroelectric domain wall memory
    Li, Yiming
    Sun, Jie
    Jiang, Anquan
    CHINESE PHYSICS B, 2023, 32 (12)
  • [5] Ferroelectric Domain Wall Memory and Logic
    Sun, Jie
    Jiang, An-Quan
    Sharma, Pankaj
    ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (09) : 4692 - 4703
  • [6] Roadmap for Ferroelectric Domain Wall Nanoelectronics
    Sharma, Pankaj
    Moise, Theodore S.
    Colombo, Luigi
    Seidel, Jan
    ADVANCED FUNCTIONAL MATERIALS, 2022, 32 (10)
  • [7] Nonvolatile ferroelectric domain wall memory
    Sharma, Pankaj
    Zhang, Qi
    Sando, Daniel
    Lei, Chi Hou
    Liu, Yunya
    Li, Jiangyu
    Nagarajan, Valanoor
    Seidel, Jan
    SCIENCE ADVANCES, 2017, 3 (06):
  • [8] Erasable Ferroelectric Domain Wall Diodes*
    Zhang, Wei
    Wang, Chao
    Lian, Jian-Wei
    Jiang, Jun
    Jiang, An-Quan
    CHINESE PHYSICS LETTERS, 2021, 38 (01)
  • [9] Domain Wall Architecture in Tetragonal Ferroelectric Thin Films
    De Luca, Gabriele
    Rossell, Marta D.
    Schaab, Jakob
    Viart, Nathalie
    Fiebig, Manfred
    Trassin, Morgan
    ADVANCED MATERIALS, 2017, 29 (07)
  • [10] Ferroelectric Domain Wall p-n Junctions
    Maguire, Jesi R.
    Mccluskey, Conor J.
    Holsgrove, Kristina M.
    Suna, Ahmet
    Kumar, Amit
    Mcquaid, Raymond G. P.
    Gregg, J. Marty
    NANO LETTERS, 2023, 23 (22) : 10360 - 10366