Monolithic high-speed CMOS-photoreceiver

被引：45

作者：

Zimmermann, H ^{[1
]}

Heide, T ^{[1
]}

Ghazi, A ^{[1
]}

机构：

[1] Univ Kiel, Lehrstuhl Halbleitertech, D-24143 Kiel, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 02期

关键词：

integrated circuits; integrated optoelectronics; optical receivers; optoelectronic devices; p-i-n photodiodes; Si;

D O I：

10.1109/68.740721

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of optoelectronic integrated CMOS receivers for applications in optical data transmission and in optical interconnects are presented. The rise and fall times of the integrated p-i-n photodiodes CPD's) are 0.19 and 0.24 ns, respectively, corresponding to -3-dB bandwidths in excess of 1.4 GHz. These PD's combine this high speed with a high quantum efficiency. Rise and fall times of 0.53 and 0.69 ns, respectively, are obtained for CMOS optoelectronic integrated circuits (OEIC's) with integrated p-i-n PD's, These OEIC's in 1.0-mu m CMOS technology handle a data rate of 622 Mb/s with a single-supply voltage of 3.3 V.

引用

页码：254 / 256

页数：3

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