One-pot fabrication of hollow SiO2 nanowires via an electrospinning technique

被引：34
|
作者：
An, Geon-Hyoung [1 ]
Jeong, Sang-Yong [2 ]
Seong, Tae-Yeon [2 ]
Ahn, Hyo-Jin [1 ]
机构：
[1] Seoul Natl Univ Sci & Technol, Dept Mat Sci & Engn, Seoul 139743, South Korea
[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
来源：
MATERIALS LETTERS | 2011年 / 65卷 / 15-16期
关键词：
SiO2; Nanowire; Hollow structures; Electrospinning; NANOFIBERS; COMPOSITE;
D O I：
10.1016/j.matlet.2011.05.043
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hollow SiO2 nanowires (NWs) were one-pot fabricated via an electrospinning method. Their morphologies, structures, and chemical compositions were investigated by means of scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). In order to fabricate optimum hollow SiO2 NWs. the relative volume ratio of tetraethyl orthosilicate (TEOS, an alkoxide precursor) to ethanol (solvent) was systematically controlled from 0.02 to 0.36. SEM, HRTEM, XRD, and XPS results indicate that amorphous SiO2 hollow NWs can be one-pot synthesized by using the volume ratio of 0.18 under a constant voltage of 8.0 kV. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：2377 / 2380
页数：4
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