Proton tolerance of third-generation, 0.12 μm 185 GHz SiGeHBTs

被引：28

作者：

Lu, Y ^{[1
]}

Cressler, JD

Krithivasan, R

Li, Y

Reed, RA

Marshall, PW

Polar, C

Freeman, G

Ahlgren, D

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA

[3] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[4] Jackson & Tull Chartered Engineers, Washington, DC 20018 USA

[5] IBM Microelect, Hopewell Jct, NY 12533 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 06期

关键词：

bipolar transistors; HBT; proton irradiation; silicon-germanium (SiGe);

D O I：

10.1109/TNS.2003.820737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results on the impact of proton irradiation on the dc and ac characteristics of third-generation, 0.12 mum 185 GHz SiGe HBTs. Comparisons with prior technology generations are used to assess how the structural changes needed to enhance performance between second and third generation technology couple to the observed proton response. The results demonstrate that SiGe HBT technologies can successfully maintain their a Mrad-level total dose, hardness, without intentional hardening, even when vertically-scaled in order to achieve unprecedented levels of transistor performance.

引用

页码：1811 / 1815

页数：5

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