Impact of exciton localization on the optical non-linearities of cavity polaritons

被引:11
作者
Krizhanovskii, DN
Dasbach, G [1 ]
Dremin, AA
Kulakovskii, VD
Gippius, NA
Bayer, M
Forchel, A
机构
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
[3] Russian Acad Sci, Inst Gen Phys, Moscow 117333, Russia
基金
俄罗斯基础研究基金会;
关键词
quantum wells; semiconductors;
D O I
10.1016/S0038-1098(01)00266-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Polaritons in a semiconductor microcavity excited below the free exciton energy have been studied by pump-and-probe experiments. The excitation results in a blue shift of the transmission peak of the lower polariton branch, followed by a strong enhancement and narrowing. These changes are opposite to those caused by high above band gap excitation. The strong differences between resonant and non-resonant excitation result from a different impact of localized excitons and unbound carriers on the quantum well susceptibility. The experimental observations are modeled in the approximation of nonperturbative coupling of the exciton system to the cavity light field. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:435 / 439
页数:5
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