Piezoelectric properties of nonstoichiometric Sr1-xBi2+2x/3Ta2O9 ceramics -: art. no. 124101

被引:29
作者
Jain, R [1 ]
Chauhan, AKS [1 ]
Gupta, V [1 ]
Sreenivas, K [1 ]
机构
[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
关键词
D O I
10.1063/1.1903105
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of poling on the structural, dielectric, and piezoelectric properties has been investigated for sol-gel-derived strontium bismuth tantalate (SBT) [Sr1-xBi2+2x/3Ta2O9] ceramics with x=0.0,0.15,0.30,0.45. The dielectric and ferroelectric properties are found to improve with increase in x up to 0.3. Beyond x > 0.3 the properties are found to degrade due to the limited solid solubility and the presence of a mixed phase of bismuth tantalate (BiTaO4) is detected with x=0.45. Poling treatment reduces the dielectric dispersion and dielectric loss in the frequency range (0.1-100 kHz). The resonance and antiresonance frequencies increase with increase in x (x=0-0.30), and the corresponding minimum impedance decreases. The measured coupling coefficients (k(p)) are small (0.0967-0.1) for x=0-0.30, and the electromechanical quality factor (Q(m)=915) is a maximum for the Sr0.7Bi2.2Ta2O9 composition (x=0.30). The estimated piezoelectric charge coefficient (d(31)) and piezoelectric voltage coefficient (g(31)) are 5.2 pC/N and 5.8x10(-3) V m/N, respectively. The positive values of d(31) and g(31) and the low dielectric permittivity of SBT yield a high value for the hydrostatic coefficients, despite the low charge coefficient of d(33)=24 pC/N. The maximum values of charge coefficient (d(h)=34 pC/N) and voltage coefficient (g(h)=39x10(-3) V m/N) are obtained for Sr0.7Bi2.2Ta2O9 composition, and the estimated hydrostatic figure of merit (d(h)g(h)x10(-15)=1215 m(2)/N) is high. (c) 2005 American Institute of Physics.
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共 25 条
[1]   Fine-tolerance resonator applications of bismuth-layer-structured ferroelectric ceramics [J].
Ando, A ;
Sawada, T ;
Ogawa, H ;
Kimura, M ;
Sakabe, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (11B) :7057-7061
[2]   PIEZOELECTRIC, PYROELECTRIC AND DIELECTRIC-PROPERTIES OF LANTHANUM MODIFIED LEAD ZIRCONATE TITANATE CERAMICS [J].
ARORA, AK ;
TANDON, RP ;
MANSINGH, A .
FERROELECTRICS, 1992, 132 (1-4) :9-25
[3]   Dislocation-density changes upon poling of polycrystalline BaTiO3 [J].
Balzar, D ;
Ledbetter, H ;
Stephens, PW ;
Park, ET ;
Routbort, JL .
PHYSICAL REVIEW B, 1999, 59 (05) :3414-3420
[4]   Impact of Sr content on dielectric and electrical properties of pulsed laser ablated SrBi2Ta2O9 thin films [J].
Bhattacharyya, S ;
Laha, A ;
Krupanidhi, SB .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (02) :1056-1061
[5]  
HITIKA K, 1983, FERROELECTRICS, V49, P265
[6]   Sintering characteristics and properties of sol gel derived Sr0.8Bi2.4Ta2.0O9 ceramics [J].
Jain, R ;
Gupta, V ;
Sreenivas, K .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 78 (2-3) :63-69
[7]  
*JCPDS, 16906 JCPDS
[8]   Electromechanical properties of SrBi2Ta2O9 thin films [J].
Kholkin, AL ;
Brooks, KG ;
Setter, N .
APPLIED PHYSICS LETTERS, 1997, 71 (14) :2044-2046
[9]   Investigation of the structural and electrical properties of Sr1-xBi2.2Ta2O9 thin films with deficient Sr contents [J].
Li, AD ;
Ling, HQ ;
Wu, D ;
Yu, T ;
Wang, M ;
Yin, XB ;
Liu, ZG ;
Ming, NB .
APPLIED SURFACE SCIENCE, 2001, 173 (3-4) :307-312
[10]   PROPERTIES OF AN INTERCONNECTED POROUS PB(ZR, TI)O3 CERAMIC [J].
NAGATA, K ;
IGARASHI, H ;
OKAZAKI, K ;
BRADT, RC .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L37-L40