A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

被引：77

作者：

Ren, Yu ^{[1
]}

Yang, Xu ^{[1
]}

Zhang, Fan ^{[1
]}

Wang, Kangping ^{[1
]}

Chen, Wenjie ^{[1
]}

Wang, Laili ^{[1
]}

Pei, Yunqing ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Shaanxi, Peoples R China

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2017年 / 64卷 / 10期

关键词：

DC circuit breaker; gate control; series connection; SiC MOSFET; voltage balancing;

D O I：

10.1109/TIE.2017.2711579

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a novel compact circuit combining function of gate control and voltage balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). Two seriesconnected SiC MOSFETs with the proposed circuit only require a single standard gate driver to achieve the gate control and voltage balancing during both steady-state and switching transition. Moreover, the proposed circuit is only composed of ten passive components. Therefore, the proposed circuit provides a low-cost and highly reliablemethod to increase the blocking voltage of the SiC MOSFET. The operation principles of the proposed circuit are theoretically analyzed. In addition, the high-blocking-voltage device is not only required in switching-mode power supply (SMPS) but also in dc-breaker applications. The proposed circuit is then modified to make it suitable to the dc-breaker applications. The simulation and experimental results validate the effectiveness and superiority of the proposed circuit in both SMPS and dc-breaker applications.

引用

页码：8299 / 8309

页数：11

共 20 条

[1] High-Voltage, High-Performance Switch Using Series-Connected IGBTs [J].