Large contact Ti/4H-SiC Schottky diodes fabricated using standard silicon processing techniques

被引：3

作者：

Sudre, C ^{[1
]}

Mooney, MB ^{[1
]}

Leveugle, C ^{[1
]}

O'Brien, J ^{[1
]}

Lane, WA ^{[1
]}

机构：

[1] Natl Univ Ireland Univ Coll Cork, NMRC, Cork, Ireland

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

silicon processing techniques; Ti Schottky contact;

D O I：

10.4028/www.scientific.net/MSF.338-342.1191

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents electrical characteristics of Ti/4H-SiC Schottky diodes utilizing the same fabrication abilities (procedures, equipment, personnel) used in a silicon fabrication process line. The characterization study includes forward and reverse I-V temperature characteristics together with C-V frequency characteristics. The effect of the temperature and the impact of a post metalization anneal was also investigated. Pre-fabricated surface morphology characterization was also undertaken.

引用

页码：1191 / 1194

页数：4

共 7 条

[1]

ALOK D, 1998, MATER SCI FORUM, V264, P264

[2] Surface morphology improvement of SiC epitaxy by sacrificial oxidation [J].