Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

被引：12
作者：
Marques, C.
Franco, N.
Alves, L. C.
da Silva, R. C.
Alves, E.
Safran, G.
McHargue, C. J.
机构：
[1] Inst Tecnol & Nucl, Dept Fis, LFI, P-2686953 Sacavem, Portugal
[2] Univ Lisbon, Ctr Fis Nucl, P-1649003 Lisbon, Portugal
[3] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
[4] Univ Tennessee, Knoxville, TN 37996 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷
关键词：
ion implantation; semiconductors; RBS-C; sapphire; nanoparticles; IBIL;
D O I：
10.1016/j.nimb.2007.01.123
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 x 10(17) cm(-2) at room temperature, followed by annealing at 1000 degrees C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation. (c) 2007 Elsevier B.V. All rights reserved.
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收藏
页码：515 / 518
页数：4
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