Properties of Porous Silicon Films Formed by Metal-Assisted Chemical Etching Using Various Oxidants

被引：0

作者：

Melnik, N. N. ^{[1
]}

Tregulov, V. V. ^{[2
]}

Skoptsova, G. N. ^{[2
]}

Milovanova, O. A. ^{[3
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

[2] Yesenin Ryazan State Univ, Ryazan 390000, Russia

[3] Ryazan State Med Univ, Ryazan 390000, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2021年 / 48卷 / 12期

关键词：

porous silicon; metal-assisted chemical etching; mechanical stress; hydrogen passivation; Raman scattering;

D O I：

10.3103/S1068335621120058

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Porous silicon films formed by metal-assisted chemical etching using H2O2 and KMnO4 oxidants are studied by Raman spectrometry and infrared absorption spectrometry. It is found that etching using H2O2 makes it possible to obtain por-Si films with stronger carrier depletion and lower mechanical stresses than those using KMnO4. The effect of hydrogen passivation in por-Si films of samples under study is not observed. It is shown that the carrier depletion in the por-Si film is caused by partial etching of impurity atoms during metal-assisted etching.

引用

页码：386 / 389

页数：4

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