Diode-pumped Nd:Gd3Ga5O12-KTiOPO4 green laser doubly passively Q-switched mode-locked by GaAs and Cr4+:YAG saturable absorbers

被引：9
作者：
Qiao, Junpeng [1 ]
Zhao, Jia [1 ]
Yang, Kejian [1 ]
Zhao, Shengzhi [1 ]
Li, Yufei [1 ]
Li, Guiqiu [1 ]
Li, Dechun [1 ]
Qiao, Wenchao [1 ]
Li, Tao [1 ]
Chu, Hongwei [1 ]
机构：
[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 03期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
ND-YAG LASER; ND-GDVO4; LASER; ND-YVO4; GGG LASER; LOCKING; MIRROR; CR4+-YAG; CRYSTAL; WAFER; EO;
D O I：
10.7567/JJAP.54.032701
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By simultaneously employing GaAs and Cr4+:YAG saturable absorbers, a diode-pumped doubly passively Q-switched and mode-locked (DPQML) Nd:Gd3Ga5O12 (Nd:GGG)/KTiOPO4 (KTP) green laser has been presented. At the maximum incident pump power of 7.69W, the obtained average output power, the pulse duration of the Q-switched envelope, the mode-locked pulse width and the pulse repetition rate are 62mW, 16.8 ns, 352 ps, and 15.5 kHz, respectively, corresponding to a pulse energy of 4.2 mu J and a peak power of 0.25kW. In comparison with singly passively Q-switched and mode-locked (SP-QML) green laser with GaAs or Cr4+:YAG saturable absorbers, the DP-QML green laser can generate shorter pulse width, deeper modulation depth and higher peak power. The coupled equations for diode-pumped doubly passively QML Nd: GGG/KTP green laser are given and the numerical simulations are in good agreement with the experimental results. (C) 2015 The Japan Society of Applied Physics
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页数：7
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